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Same model may have multiple batches, images only for reference.
IXTX22N100L Real Image
Same model may have multiple batches, images only for reference.

IXTX22N100L

Part No IXTX22N100L
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 22A PLUS247-3 / N-Channel 1000 V 22A (Tc) 700W (Tc) Through Hole PLUS247™-3
Datasheet
IXTX22N100L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Linear
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 11A, 20V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7050 pF @ 25 V
Power Dissipation (Max) 700W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXTX22
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346703-IXTX22N100L
Ultra Librarian 3D Model Ultra Librarian IXTX22N100L CAD Model

Description

The IXTX22N100L is an N-Channel MOSFET transistor from IXYS.

  • Series: Linear
  • Drain to Source Voltage: 1000V
  • Power Dissipation: 700W (Tc)
  • Continuous Drain Current: 22A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±30V
  • Gate Threshold Voltage: 5V @ 250μA
  • Package: TO-247-3 Variant
  • Mounting Type: through hole
  • Input Capacitance: 7050 pF @ 25V
  • Maximum On-State Resistance: 600mOhm @ 11A, 20V
  • Suitable for: power supplies, motor control, and DC-DC converters

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