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Same model may have multiple batches, images only for reference.
IXTY1N120P Real Image
Same model may have multiple batches, images only for reference.

IXTY1N120P

Part No IXTY1N120P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 1A TO-252
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1200V
Continuous Drain Current at 25°C 1A (Tc)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1049972-IXTY1N120P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTY1N120P CAD Model

Description

The IXYS MOSFET is a high-performance N-channel power MOSFET designed for use in a wide range of electronic applications.

  • Drain-Source Breakdown Voltage: 1200V
  • Continuous Drain Current: 1A (Tc)
  • Package: TO-252, (D-Pak)
  • Mounting: SMD (SMT)

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36+ $2.8082 $101.0952
56+ $2.7204 $152.3424
76+ $2.6327 $200.0852
99+ $2.5449 $251.9451
132+ $2.2816 $301.1712
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Availability: 5,668 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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