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Same model may have multiple batches, images only for reference.
IXTY32P05T Real Image
Same model may have multiple batches, images only for reference.

IXTY32P05T

Part No IXTY32P05T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 50V 32A TO-252
Datasheet
IXTY32P05T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1975pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 39 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1049977-IXTY32P05T
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 70
Ultra Librarian 3D Model Ultra Librarian IXTY32P05T CAD Model

Description

The IXYS IXTY32P05T is a P-channel MOSFET designed for use in discrete semiconductor products.

  • Package: TO-252
  • Power Dissipation: 83W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current @ 25°C: 32A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Gate Charge: 46nC @ 10V
  • Input Capacitance: 1975pF @ 25V
  • Rds On @ Id, Vgs: 39 mOhm @ 16A, 10V
  • Product Status: Active
  • Packaging: Tube/Rail

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