The 2N5551C is a high-voltage NPN transistor manufactured by KEC (Korea Electronics Co., Ltd.). It's designed for use in a variety of general-purpose amplification and switching applications, particularly where high voltage handling is required.

Applications

• High-voltage amplification
• Switching circuits
• Linear regulators
• Oscillators
• General-purpose amplifiers

Features

• NPN Transistor
• High Voltage: VCEO = 160V
• Continuous Collector Current: IC = 600mA
• High Transition Frequency: fT = 100 MHz (typical)
• Low Noise Figure

Benefits

• Suitable for high-voltage applications, preventing breakdown and ensuring reliable operation.
• Versatile usage in amplification and switching circuits due to its robust characteristics.
• Improved signal amplification with a high transition frequency.
• Lower noise amplification in sensitive circuits thanks to its low noise figure.
• Stable performance and long lifespan due to KEC's manufacturing quality.

Additional Details

The 2N5551C comes in a TO-92 package. Its total power dissipation is around 625mW. The collector-base voltage (VCBO) is 180V, and the emitter-base voltage (VEBO) is 6V. The operating and storage junction temperature ranges from -55°C to +150°C. The DC current gain (hFE) typically ranges from 80 to 250, depending on the operating conditions. Its saturation voltage is relatively low, contributing to its efficiency in switching applications.