The KTC811E-Y-RTK/P is a PNP Epitaxial Planar Transistor manufactured by KEC (Korea Electronics Co., Ltd.). This transistor is designed for switching and amplifier applications.

Applications

• Switching circuits
• Amplifier circuits in audio and radio frequency (RF) systems
• General purpose amplification
• Driver stages for higher power devices

Features

• High Collector Current (Ic = -500mA)
• Low Collector-Emitter Saturation Voltage (VCE(sat))
• High Transition Frequency (fT)
• Complementary to NPN transistor KTA1504E
• RoHS compliant

Benefits

• Efficient switching performance due to low saturation voltage.
• Suitable for both switching and amplification applications.
• Compact design for space-constrained applications.
• Reliable performance in various electronic circuits.

Specifications

The KTC811E-Y-RTK/P is a PNP transistor. Its key specifications include:

• Collector-Base Voltage (VCBO): -50V
• Collector-Emitter Voltage (VCEO): -50V
• Emitter-Base Voltage (VEBO): -5V
• Collector Current (IC): -500mA
• Collector Power Dissipation (PC): 400mW
• DC Current Gain (hFE): Typically between 120 and 270 (at IC = -150mA, VCE = -2V)
• Transition Frequency (fT): 180 MHz (typical)
• Operating Junction Temperature: 150°C

The device is commonly available in a SOT-23 package, making it suitable for automated assembly processes. The complementary NPN transistor is KTA1504E.