The MMSF60R190QTH is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by MagnaChip Semiconductor. It is designed for high-efficiency power switching applications. This MOSFET is built with advanced technology to minimize on-state resistance (Rds(on)) and gate charge, leading to reduced power losses and improved overall system efficiency.

Applications

• Synchronous rectification in DC-DC converters
• Power inverters
• Motor control circuits
• Load switching
• Power supplies for various electronic devices

Features

• Voltage Rating: 600V
• On-Resistance (Rds(on)): 0.190 Ohms (typical)
• Low Gate Charge (Qg)
• Fast Switching Speed
• Avalanche Ruggedness
• RoHS Compliant

Benefits

• High efficiency in power conversion applications
• Reduced power losses due to low Rds(on)
• Improved thermal performance
• Enhanced system reliability
• Meets environmental regulations

The MMSF60R190QTH is designed to handle high voltage and current levels, making it suitable for demanding power applications. The low gate charge allows for faster switching speeds, further reducing power losses. Its avalanche ruggedness provides additional protection against voltage transients. The device is available in a through-hole package, facilitating easy mounting and heat dissipation.

Technical Specifications:

• Drain-Source Voltage (Vds): 600V
• Gate-Source Voltage (Vgs): ±30V
• Continuous Drain Current (Id): Varies with temperature and package
• Operating Temperature Range: -55°C to +150°C
• Package Type: TO-220