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2N5147

Part No 2N5147
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description POWER BJT / Bipolar (BJT) Transistor PNP 80 V 2 A 7 W Through Hole TO-5AA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Mfr Microchip Technology
Series -
Package Bulk
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Power - Max 7 W
Frequency - Transition -
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-5AA
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1 pcs
Win Source Part Number 1380724-2N5147
Ultra Librarian 3D Model Ultra Librarian 2N5147 CAD Model

Description

Microchip Technology 2N5147 PNP Transistor

The 2N5147, by Microchip Technology, is a PNP bipolar junction transistor (BJT) designed for use in a wide array of electronic applications. Known for its reliability and efficiency, this transistor is a staple in the semiconductor industry, suitable for amplification and switching purposes.

Key Features:

  • PNP Configuration: The 2N5147 has a PNP configuration, which means the majority charge carriers are holes, making it ideal for positive signal amplification.
  • High Voltage Tolerance: It can handle moderate power levels and is capable of withstanding significant voltage, making it robust for various circuit designs.
  • Amplification Capabilities: With its ability to amplify analog signals, it is often used in audio amplifiers, signal processing, and other analog circuits.
  • Switching Applications: The 2N5147 is also suitable for switching applications, offering fast switching times for digital and mixed-signal circuits.

Specifications:

Parameter Value Collector-Emitter Voltage (VCEO) 60V Collector-Base Voltage (VCBO) 80V Emitter-Base Voltage (VEBO) 5V Collector Current (IC) 1A Power Dissipation (Pd) 800 mW

This transistor is a versatile component that can be deployed in a multitude of electronic circuits. Its ability to operate at higher voltages while maintaining stability and performance makes the 2N5147 a preferred choice for designers and engineers. Whether it's for amplifying audio signals or switching in power supplies, the 2N5147 from Microchip Technology is a reliable and efficient solution for your electronic needs.

Please note that all specifications should be verified with the datasheet provided by Microchip Technology for the most accurate and up-to-date information.

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