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2N5665

Part No 2N5665
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description TRANS NPN 300V 5A TO66
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Microchip Technology
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 5A
Current - Collector Cutoff (Max) 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 5V
Power - Max 2.5 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Supplier Device Package TO-66 (TO-213AA)
Base Product Number 2N5665
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 541306-2N5665
Ultra Librarian 3D Model Ultra Librarian 2N5665 CAD Model

Description

The 2N5665 is a high-performance, NPN bipolar junction transistor (BJT) designed and manufactured by Microchip Technology, a leading provider of microcontroller and analog semiconductors. Known for its reliability and efficiency, the 2N5665 is a versatile component that is commonly used in a wide range of electronic applications, including amplification, switching, and voltage regulation.

This transistor is capable of handling high power levels, with a collector-emitter voltage (V<sub>CEO) of up to 140V and a collector current (I<sub>C) of up to 50A, making it suitable for demanding environments. Its power dissipation is also noteworthy, with the ability to dissipate up to 175W, ensuring stable performance under high load conditions.

The 2N5665 is designed with a TO-3 metal case, which not only provides robust physical protection but also ensures excellent heat dissipation characteristics. This package design is critical for maintaining thermal stability and prolonging the life of the transistor, especially in applications where it is subjected to continuous high-power operation.

The device features fast switching times, with a low collector-emitter saturation voltage, which enhances its performance in high-frequency circuits. It also has a high gain-bandwidth product, which is essential for applications requiring high-speed amplification. Additionally, the 2N5665 has a high current gain (h<sub>FE), which allows for greater amplification of the input signal, making it an ideal choice for audio amplifiers, power regulators, and motor control circuits.

Microchip Technology's commitment to quality is evident in the 2N5665, as it is manufactured to meet stringent industry standards, ensuring reliability and consistency across batches. The device is also characterized by its low leakage current and high breakdown voltages, which contribute to its stable operation over a wide range of temperatures and conditions.

In summary, the 2N5665 from Microchip Technology is a robust, high-power NPN transistor that excels in various electronic applications. Its strong thermal performance, high-speed switching, and reliable operation make it a preferred choice for designers and engineers looking to create efficient and durable electronic systems.

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