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JAN2N5662

Part No JAN2N5662
Manufacturer Microchip Technology
Catalog RF Transistors (BJT)
Description TRANS NPN 200V 2A TO5  /  Bipolar (BJT) Transistor NPN 200 V 2 A 1 W Through Hole TO-5
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Microchip Technology
Series Military, MIL-PRF-19500/454
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 200 V
Vce Saturation (Max) @ Ib, Ic 800mV @ 400mA, 2A
Current - Collector Cutoff (Max) 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 5V
Power - Max 1 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-5
Base Product Number 2N5662
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1086-16156-MIL,1086-16156
Standard Package 1
Win Source Part Number 1164609-JAN2N5662
Ultra Librarian 3D Model Ultra Librarian JAN2N5662 CAD Model

Description

The JAN2N5662 is a high-performance NPN Power Transistor from Microchip Technology, designed to meet stringent military standards for space and defense applications. This device is part of Microchip's range of radiation-hardened electronic components, which are engineered to withstand extreme environmental conditions and provide reliable performance in critical missions.

Key Features

  • High Voltage Capability: The JAN2N5662 is capable of handling high voltage operations, making it suitable for power regulation and conversion applications in complex electronic systems.
  • Robust Power Handling: With its ability to manage significant power levels, this transistor is ideal for amplifying signals or driving loads in demanding environments.
  • Radiation Hardened: Designed to resist the effects of radiation, it ensures consistent performance in space applications where exposure to radiation is a concern.
  • Military Standards Compliance: The device meets the requirements of MIL-PRF-19500/398, ensuring its reliability and quality for military and aerospace applications.
  • Quality Assurance: As with all Microchip products, the JAN2N5662 undergoes rigorous testing to maintain high standards of quality and reliability.

Applications

The JAN2N5662 is suitable for a wide range of high-reliability applications, including:

  • Power supply systems in satellites and spacecraft
  • Defense electronics such as radar and communication systems
  • High-reliability industrial equipment
  • Avionics and other aerospace electronics

Technical Specifications

Parameter Value Configuration Single Collector-Emitter Voltage VCEO Max 300 V Collector-Base Voltage VCBO 350 V Emitter-Base Voltage VEBO 7 V Collector Current - Continuous IC 2 A Power Dissipation 25 W

With its robust design and adherence to military specifications, the JAN2N5662 is a reliable choice for designers looking to incorporate a durable and high-performing power transistor into their space-grade or defense-related electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.4571 $62.7426
14+ $8.5803 $120.1242
21+ $8.3122 $174.5562
29+ $8.0440 $233.2760
38+ $7.7759 $295.4842
50+ $6.9715 $348.5750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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