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JANTXV2N3439

Part No JANTXV2N3439
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description TRANS NPN 350V 1A TO39 / Bipolar (BJT) Transistor NPN 350 V 1 A 800 mW Through Hole TO-39
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Microchip Technology
Series Military, MIL-PRF-19500/368
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 350 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max) 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V
Power - Max 800 mW
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Base Product Number 2N3439
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 848373-JANTXV2N3439
Ultra Librarian 3D Model Ultra Librarian JANTXV2N3439 CAD Model

Description

The JANTXV2N3439 is a high-quality bipolar junction transistor (BJT) from the reputable Microchip Technology, designed to meet the stringent requirements of military and aerospace applications. This NPN transistor is part of the JAN (Joint Army/Navy) series, which indicates that it adheres to the rigorous standards of reliability and performance set by the United States Department of Defense.

Key Features

  • High Reliability: As a JANTXV-level product, this transistor has undergone extensive testing and quality control measures, ensuring outstanding performance under extreme conditions.
  • Wide Operating Range: The JANTXV2N3439 is designed to function optimally over a broad range of temperatures, making it suitable for various challenging environments.
  • Versatile Applications: This component is ideal for high-speed switching and amplifier applications, offering excellent versatility across different electronic circuits.
  • Robust Construction: The device is built to last, with a sturdy package that can withstand mechanical stress and environmental factors such as radiation, moisture, and temperature extremes.

Specifications

Parameter Value Transistor Polarity NPN Collector-Emitter Voltage VCEO Max 350 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current Ic Max 1 A Power Dissipation 10 W

Applications

The JANTXV2N3439's robustness and reliability make it an excellent choice for critical applications in military, aerospace, and high-reliability systems. Its ability to handle high voltages and currents, along with its fast switching speeds, make it a fundamental component in power regulation, control systems, and communication equipment.

Quality and Standards

Microchip Technology's commitment to quality ensures that the JANTXV2N3439 transistor meets or exceeds the stringent specifications required for military-grade components. It is manufactured in facilities that are certified for aerospace quality management systems, guaranteeing a high level of product consistency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.4155 $62.0775
12+ $10.1871 $122.2452
18+ $9.8688 $177.6384
25+ $9.5504 $238.7600
32+ $9.2321 $295.4272
42+ $8.2770 $347.6340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,100 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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