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MSC750SMA170B4

Part No MSC750SMA170B4
Manufacturer Microchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS SJT 1700V TO247-4 / N-Channel 1700 V 7A (Tc) 68W (Tc) Through Hole TO-247-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Microchip Technology
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 940mOhm @ 2.5A, 20V
Vgs(th) (Max) @ Id 3.25V @ 100µA (Typ)
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 20 V
Vgs (Max) +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds 184 pF @ 1360 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
Standard Package 90
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1350551-MSC750SMA170B4
Ultra Librarian 3D Model Ultra Librarian MSC750SMA170B4 CAD Model

Description

Microchip Technology MSC750SMA170B4 Product Overview

The MSC750SMA170B4 is a state-of-the-art silicon carbide (SiC) MOSFET from Microchip Technology, designed to deliver high-efficiency and high-power density solutions for a wide range of power applications. This advanced semiconductor device is engineered to handle high temperatures and switching frequencies with ease, making it an ideal choice for energy-sensitive and space-constrained applications.

Key Features

  • High-Performance SiC MOSFET: The device is built using silicon carbide, which provides superior thermal conductivity and allows for higher efficiency compared to traditional silicon-based MOSFETs.
  • High Blocking Voltage: With a 1700V drain-to-source breakdown voltage (V<sub>DS), the MSC750SMA170B4 can safely manage high voltage operations, making it suitable for high-voltage power systems.
  • Low On-Resistance: The device boasts a low on-resistance (R<sub>DS(on)) of just 750 mΩ, which minimizes conduction losses and improves overall system efficiency.
  • Fast Switching Speeds: Designed for fast switching applications, the MSC750SMA170B4 reduces switching losses, which is critical for high-frequency power converters and inverters.
  • High-Temperature Operation: Its robust design enables operation at elevated temperatures, ensuring reliability and performance in harsh environments.

Applications

The MSC750SMA170B4 is versatile and can be used in various applications, including:

  • Electric Vehicle (EV) Chargers
  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Renewable Energy Systems
  • Power Factor Correction (PFC) Circuits

Quality and Reliability

Microchip Technology is known for its commitment to quality, and the MSC750SMA170B4 is no exception. It undergoes rigorous testing and quality assurance processes to ensure that it meets the high standards expected of industrial-grade components. With its robust design and Microchip's reputation for reliability, this SiC MOSFET is a trustworthy choice for engineers looking to enhance the performance and efficiency of their power systems.

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