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TN0610N3-G

Part No TN0610N3-G
Manufacturer Microchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 500MA TO92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microchip Technology
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 500mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 3V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 750mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA)
Win Source Part Number 1110793-TN0610N3-G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TN0610N3-G CAD Model

Description

Microchip Technology TN0610N3-G Product Overview

The TN0610N3-G is a high-performance, N-channel enhancement-mode MOSFET designed and manufactured by Microchip Technology, a leader in microcontroller, mixed-signal, analog, and Flash-IP solutions. This MOSFET is part of their extensive range of power management devices, known for their reliability and efficiency.

The TN0610N3-G operates as a switch with a drain-to-source voltage (V<sub>DS) of 60V and a continuous drain current (I<sub>D) of 1.0A, making it suitable for a variety of applications that require high-speed switching and low on-resistance. Its threshold voltage (V<sub>GS(th)) is specified at a minimum of 1.0V, ensuring that the device can be controlled with low gate voltages, which is beneficial for battery-operated and low-power circuits.

With a low on-resistance of 1.2 Ohms, the TN0610N3-G provides efficient power handling capabilities, which is crucial for minimizing losses in power conversion applications. This characteristic also contributes to a reduction in heat generation, enhancing the overall longevity and reliability of the device.

Housed in a TO-92 package, the TN0610N3-G is designed for through-hole mounting, which is ideal for prototyping and applications where durability and easy replacement are important. The TO-92 package is known for its simplicity and ease of handling, making it a preferred choice for many electronics projects and commercial products.

Applications for the TN0610N3-G MOSFET are diverse and include load switches, power management in portable and battery-powered devices, motor control circuits, and other situations where efficient power control is necessary. Its robust design ensures consistent performance even under varying environmental conditions, which is vital for industrial and automotive applications that demand high reliability.

In summary, the TN0610N3-G from Microchip Technology is a versatile and efficient N-channel MOSFET that offers a combination of low on-resistance, high-speed switching, and a compact TO-92 package, making it an excellent choice for designers looking to enhance power management in their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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