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M29W008ET70N6E.

Part No M29W008ET70N6E.
Manufacturer Micron Technology Inc.
Catalog OEM Parts (M - N)
Description FLASH TOP BLOCK 8MB, SMD, 29W008; Flash Memory Type: Parallel NOR; Memory Case Style: TSOP; No. of Pins: 40Pins;...
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Win Source Part Number 1073601-M29W008ET70N6E.
Categories OEM Parts(M-N)
Manufacturer Micron Technology Inc.
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian M29W008ET70N6E. CAD Model

Description

The M29W008ET70N6E is an 8 Mbit (1Mb x8 or 512Kb x16) Flash memory device manufactured by Micron Technology. It is a non-volatile memory, meaning it retains stored data even when power is removed. This particular model features a fast access time of 70ns, making it suitable for applications requiring quick data retrieval.

Applications

  • Embedded Systems: Storing firmware, boot code, and configuration data.
  • Networking Equipment: Storing network operating systems and configuration files.
  • Industrial Automation: Storing program code and data for programmable logic controllers (PLCs).
  • Consumer Electronics: Storing firmware and user data in devices like digital cameras and MP3 players.
  • Automotive Electronics: Storing ECU (Engine Control Unit) parameters and software.
  • Telecommunications Equipment: Storing network configuration data and embedded software.

Features

  • 8 Mbit (1Mb x 8 or 512Kb x 16) memory organization.
  • Fast access time: 70 ns.
  • Single 3V supply voltage.
  • Sector Erase Architecture: Flexible block locking.
  • Top or Bottom Boot Block configurations
  • Common Flash Interface (CFI) compliant.
  • Low power consumption.
  • Available in various package options, including TSOP and PLCC.

Benefits

  • Non-Volatile Data Storage: Retains data even when power is off, ensuring data integrity.
  • Fast Access Time: Enables quick data retrieval, improving system performance.
  • Easy Integration: Standard pinout and single supply voltage simplify integration into existing systems.
  • Reliable Data Storage: Offers high endurance and data retention, ensuring long-term data reliability.
  • Low Power Consumption: Minimizes power consumption, making it suitable for battery-powered applications.
  • Sector Erase: Enables selective erasure of memory blocks, improving programming efficiency.

Additional Details

The M29W008ET70N6E is typically programmed using a standard Flash memory programmer. The device supports sector erase and page write operations. The sector erase feature allows individual blocks of memory to be erased without affecting other blocks. Endurance is typically rated at 100,000 erase/write cycles per sector. Data retention is typically guaranteed for 20 years or more. The operating temperature range is typically -40°C to +85°C. The device is available in both TSOP (Thin Small Outline Package) and PLCC (Plastic Leaded Chip Carrier) packages. Consult the device datasheet for detailed specifications and application notes. Proper decoupling capacitors should be used to minimize noise on the power supply line. The device is sensitive to electrostatic discharge (ESD) and should be handled with appropriate precautions.

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