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MT47H128M8HV-3:E

Part No MT47H128M8HV-3:E
Manufacturer Micron Technology Inc.
Catalog DDR
Description DDR2-667 128Mx8 VFBGA
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Series *
Win Source Part Number 942035-MT47H128M8HV-3:E
Ultra Librarian 3D Model Ultra Librarian MT47H128M8HV-3:E CAD Model

Description

The MT47H128M8HV-3:E is a DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) component manufactured by Micron Technology. This memory chip is designed for applications requiring high-speed data access and storage, offering a combination of performance, capacity, and reliability.

Applications

  • Desktop and Laptop Computers: Serves as main system memory for running operating systems, applications, and other software.
  • Graphics Cards: Used as memory for storing textures, frame buffers, and other graphical data, enabling smooth and responsive graphics rendering.
  • Gaming Consoles: Employed as system memory for game execution and data storage, enhancing the gaming experience.
  • Networking Devices: Integrated into routers, switches, and other networking equipment for packet buffering and data processing.
  • Embedded Systems: Used in a variety of embedded applications requiring high-speed memory, such as industrial controllers and automotive systems.

Features

  • High-Speed Data Transfer: Operates at a high clock frequency, enabling fast data transfer rates.
  • Double Data Rate (DDR2) Technology: Transfers data on both the rising and falling edges of the clock signal, effectively doubling the bandwidth.
  • Large Memory Capacity: Offers a substantial memory capacity (128M x 8), allowing for the storage of significant amounts of data.
  • Low Power Consumption: Designed for efficient power usage, making it suitable for portable devices and energy-sensitive applications.
  • Differential Clock Inputs (CK and /CK): Minimizes clock skew and improves signal integrity.
  • Data Mask (DM) Function: Enables selective writing of data bytes, providing flexibility in memory operations.
  • Auto Refresh and Self Refresh Modes: Supports automatic and self-refresh modes to maintain data integrity.

Benefits

  • Increased System Performance: Improves overall system performance by providing fast access to data.
  • Enhanced Application Responsiveness: Enables quicker loading times and smoother execution of applications.
  • Improved Graphics Performance: Provides the necessary bandwidth for rendering complex graphics and textures.
  • Greater Memory Capacity: Allows for the storage of larger datasets and more complex applications.
  • Reduced Power Consumption: Contributes to longer battery life in portable devices and lower energy costs in desktop systems.

Additional Details

The MT47H128M8HV-3:E operates at a specific voltage level (typically 1.8V) and conforms to JEDEC standards for DDR2 SDRAM. It supports various operating modes and timing parameters that can be configured to optimize performance for different applications. The component is available in a FBGA (Fine-pitch Ball Grid Array) package, providing a compact and reliable solution for high-density memory applications. The "-3:E" suffix indicates a specific speed grade and temperature range within the broader MT47H128M8HV series.

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