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APT34M60B

Name: APT34M60B
Brand: Microsemi Corporation
SKU: 57801
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	APT34M60B
Manufacturer	Microsemi Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 36A TO-247
Datasheet	APT34M60B Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Microsemi Corporation
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	600V
Continuous Drain Current at 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	5V @ 1mA
Max Gate Charge	165nC @ 10V
Max Input Capacitance	6640pF @ 25V
Maximum Gate-Source Voltage	±30V
Power Dissipation (Max)	624W (Tc)
Maximum Rds On at Id,Vgs	190 mOhm @ 17A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-247 [B]
Dimension	TO-247-3
Win Source Part Number	051458-APT34M60B
Popularity	Medium
Supply and Demand Status	Limited
Quantity per package	1
Ultra Librarian 3D Model	Ultra Librarian APT34M60B CAD Model

Alternative Products

Description

APT34M60B - High-Efficiency Power MOSFET

The APT34M60B is a robust power MOSFET designed for high-efficiency switching applications. It is optimized for low gate drive loss and rapid switching times, making it ideal for modern power applications.

Applications: Power converters, Motor drives, Lighting systems
Features: Low on-resistance, Fast switching, Extreme ruggedness
Benefits: Enhanced efficiency, Improved thermal performance, Increased power density

This component is well-suited for applications requiring high reliability and efficiency.

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