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Same model may have multiple batches, images only for reference.
APT35GN120L2DQ2G Real Image
Same model may have multiple batches, images only for reference.

APT35GN120L2DQ2G

Part No APT35GN120L2DQ2G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 94A 379W TO264
Datasheet
APT35GN120L2DQ2G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type NPT, Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 94A
Pulsed Collector Current 105A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 35A
Maximum Power Dissipation 379W
Total Switching Energy(Ets) 2.315mJ (off)
Input Type Standard
Gate Charge 220nC
Turn-on and Turn-off delay time 24ns/300ns
Testing Conditions 800V, 35A, 2.2 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-264-3, TO-264AA
Win Source Part Number 051461-APT35GN120L2DQ2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT35GN120L2DQ2G CAD Model

Description

APT35GN120L2DQ2G - Next-Generation GaN Power Device

The APT35GN120L2DQ2G represents the forefront of GaN technology, offering exceptional power density and performance for next-generation electronics.

  • Applications: RF amplifiers, Satellite communication, High-performance computing
  • Features: High power density, Low ON-state resistance, Superior thermal properties
  • Benefits: Reduces cooling requirements, Increases system efficiency, Supports miniaturization

This device is engineered for the highest levels of performance in advanced electronics systems.

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