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Same model may have multiple batches, images only for reference.
APT37M100B2 Real Image
Same model may have multiple batches, images only for reference.

APT37M100B2

Part No APT37M100B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Datasheet
APT37M100B2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 305nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 9835pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1135W (Tc)
Rds On (Maximum) @ Id, Vgs 330 mOhm @ 18A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX [B2]
Package TO-247-3 Variant
Win Source Part Number 1146762-APT37M100B2
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT37M100B2
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT37M100B2 CAD Model

Description

The APT37M100B2 is a MOSFET technology-based discrete semiconductor product manufactured by Microsemi Corporation.

  • Manufacturer Homepage: www.microsemi.com
  • Package Variant: TO-247-3
  • Power Dissipation (Maximum): 1135W (Tc)

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Quantity Unit Price Ext. Price
2+ $32.9045 $65.8090
4+ $26.9986 $107.9944
6+ $26.1549 $156.9294
8+ $25.3112 $202.4896
11+ $24.4675 $269.1425
14+ $21.9364 $307.1096
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