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Same model may have multiple batches, images only for reference.
APT6030BN
Same model may have multiple batches, images only for reference.

APT6030BN

Part No APT6030BN
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 23A TO247AD
Datasheet
APT6030BN Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 210nC @ 10V
Max Input Capacitance 3500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 11.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Dimension TO-247-3
Win Source Part Number 1018085-APT6030BN
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT6030BN CAD Model

Description

The Microsemi Corporation MOSFET with part number 1018085-APT6030BN is a N-Channel polarity electronic component. It has a power dissipation of 360W (Tc) and a drain-source breakdown voltage of 600V.

  • Polarity: N-Channel
  • Power Dissipation: 360W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 23A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 300 mOhm @ 11.5A, 10V
  • Technology: MOSFET
  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: TO-247AD
  • Maximum Gate Charge: 210nC @ 10V
  • Maximum Input Capacitance: 3500pF @ 25V

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