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Same model may have multiple batches, images only for reference.
APT68GA60LD40 Real Image
Same model may have multiple batches, images only for reference.

APT68GA60LD40

Part No APT68GA60LD40
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description High Speed PT IGBT
Datasheet
APT68GA60LD40 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 121A
Current - Collector Pulsed (Icm) 202A
Vce(on) (Maximum) @ Vge, Ic 2.5V @ 15V, 40A
Power - Max 520W
Switching Energy 715μJ (on), 607μJ (off)
Input Type Standard
Gate Charge 198nC
Td (on/off) @ 25°C 21ns/133ns
Test Condition 400V, 40A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 22ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-264-3, TO-264AA
Manufacturer Package TO-264 [L]
Win Source Part Number 1146886-APT68GA60LD40
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT68GA60LD40
Introduction Date October 15, 2008
ECCN EAR99
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian APT68GA60LD40 CAD Model

Description

The Microsemi Corporation APT68GA60LD40 is a semiconductor device that is used as an insulated gate bipolar transistor (IGBT).

  • Current - Collector (Ic) (Maximum): 121A
  • Voltage - Collector Emitter Breakdown (Maximum): 600V
  • Power: 520W
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Packaging: TO-264-3, TO-264AA

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