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Same model may have multiple batches, images only for reference.
APT6M100K Real Image
Same model may have multiple batches, images only for reference.

APT6M100K

Part No APT6M100K
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 6A TO-220
Datasheet
APT6M100K Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1410pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 225W (Tc)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 [K]
Dimension TO-220-3
Win Source Part Number 051483-APT6M100K
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT6M100K CAD Model

Description

The APT6M100K is a highly efficient MOSFET ideal for precision power control in electronic circuits. It offers low on-resistance and high-frequency operation, which are essential for modern, efficient electronic systems.

Features and Benefits:

  • High-frequency handling capability
  • Low on-resistance enhances efficiency
  • Compact size for versatile applications

Applications:

  • Switch-mode power supplies
  • Buck converters
  • High-frequency amplifiers

Its compact form factor and efficient performance make the APT6M100K a versatile choice for engineers focusing on precision and efficiency in power management applications.

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