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APT75F50B2

Name: APT75F50B2
Brand: Microsemi Corporation
SKU: 564200
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	APT75F50B2
Manufacturer	Microsemi Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-Channel FREDFET
Datasheet	APT75F50B2 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Microsemi Corporation
Series	POWER MOS 8
Packaging	Tube
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	500V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Maximum) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs	290nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	11600pF @ 25V
Vgs (Maximum)	±30V
Power Dissipation (Maximum)	1040W (Tc)
Rds On (Maximum) @ Id, Vgs	75 mOhm @ 37A, 10V
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	Through Hole
Manufacturer Package	T-MAX [B2]
Package	TO-247-3 Variant
Win Source Part Number	1146888-APT75F50B2
Manufacturer Homepage	www.microsemi.com
Popularity	Medium
Supply and Demand Status	Limited
Quantity per package	1
Family Name	APT75F50B2
Introduction Date	January 09, 2006
ECCN	EAR99
Estimated EOL Date	2024
Ultra Librarian 3D Model	Ultra Librarian APT75F50B2 CAD Model

Description

The APT75F50B2 is a power MOSFET transistor from Microsemi Corporation.

Series: POWER MOS 8
Packaging: Tube
Supply and Demand Status: Limited
Alternative Parts: IXFX78N50P3, STW45NM50FD, and STW45NM50
Introduction Date: January 09, 2006
Estimated EOL Date: 2024
Drain Source Voltage: 500V
Channel Type: N
Gate Charge (Qg) (Maximum) @ Vgs: 290nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 11600pF @ 25V
Category: Discrete Semiconductor Products

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