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APT94N65B2C3G

Part No APT94N65B2C3G
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 94A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 5.8mA
Max Gate Charge 580nC @ 10V
Max Input Capacitance 13940pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 833W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 47A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package T-MAX [B2]
Dimension TO-247-3 Variant
Win Source Part Number 199265-APT94N65B2C3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APT94N65B2C3G CAD Model

Description

APT94N65B2C3G

The APT94N65B2C3G is a versatile IGBT module ideal for projects that require high current and voltage handling capabilities. This component is engineered to optimize efficiency and enhance system reliability.

  • Features and Benefits:
  • High current density
  • Efficient thermal management
  • Extended operational life
  • Applications and Projects:
  • Power factor correction units
  • Uninterruptible power supplies (UPS)
  • Renewable energy systems

The compact and durable design of the APT94N65B2C3G makes it a preferred choice for high-power electrical systems that demand reliability and longevity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.4167 $54.1670
23+ $4.4445 $102.2235
35+ $4.3056 $150.6960
48+ $4.1667 $200.0016
63+ $4.0278 $253.7514
84+ $3.6111 $303.3324
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,899 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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