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Same model may have multiple batches, images only for reference.
APT9F100B Real Image
Same model may have multiple batches, images only for reference.

APT9F100B

Part No APT9F100B
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel FREDFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2606pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 337W (Tc)
Rds On (Maximum) @ Id, Vgs 1.6 Ohm @ 5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247 [B]
Package TO-247-3
Win Source Part Number 1146917-APT9F100B
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT9F100B
Introduction Date May 26, 2009
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT9F100B CAD Model

Description

The APT9F100B is a high voltage MOSFET manufactured by Microsemi Corporation.

  • Series: POWER MOS 8
  • Package: TO-247-3
  • Drain-Source Voltage: 1000V
  • Continuous Drain Current (@ 25°C): 9A
  • Gate Charge (@ 10V): 80nC
  • Input Capacitance (@ 25V): 2606pF
  • Maximum Power Dissipation (@ Tc): 337W
  • Channel Type: N
  • Maximum Vgs: ±30V
  • Rds On (@ 5A, 10V): 1.6 Ohm

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