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Same model may have multiple batches, images only for reference.
JANTX2N3739 Real Image
Same model may have multiple batches, images only for reference.

JANTX2N3739

Part No JANTX2N3739
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 300V 1A TO-66
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/402
Transistor Type NPN
Current - Collector (Ic) (Maximum) 1A
Voltage - Collector Emitter Breakdown (Maximum) 300V
Vce Saturation (Maximum) @ Ib, Ic 2.5V @ 25mA, 250mA
Current - Collector Cutoff (Maximum) 100μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 25 @ 250mA, 10V
Power - Max 20W
Operating Temperature Range -55°C ~ 200°C (TJ)
Win Source Part Number 762214-JANTX2N3739
Popularity Medium
Supply and Demand Status Limited
Family Name 2N3739
Introduction Date January 06, 1998
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian JANTX2N3739 CAD Model

Description

The 762214-JANTX2N3739 is a Discrete Semiconductor Product from Microsemi Corporation.

  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Maximum Power: 20W
  • Transistor Type: NPN
  • Current - Collector (Ic) (Maximum): 1A
  • Voltage - Collector Emitter Breakdown (Maximum): 300V
  • Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 25mA, 250mA
  • Current - Collector Cutoff (Maximum): 100μA (ICBO)
  • DC Current Gain (hFE) (Minimum) @ Ic, Vce: 25 @ 250mA, 10V
  • Series: Military, MIL-PRF-19500/402
  • Operating Temperature Range: -55°C ~ 200°C (TJ)
  • Introduction Date: January 06, 1998
  • Estimated EOL Date: 2027

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