The Toshiba Semiconductor and Storage RN1907FE,LF(CB) is a dual NPN pre-biased transistor polarity with a maximum current collector of 100mA.

• Manufacturer: Toshiba Semiconductor and Storage
• Transistor Type: Dual NPN Pre-Biased
• Maximum Current Collector: 100mA
• VCEO maximum collector-emitter breakdown voltage: 50V
• Max Vce (sat): 300mV @ 250μA, 5mA
• Collector cut-off current (Max): 100nA (ICBO)
• Typical gain (hFE) (Min): 80 @ 10mA, 5V
• Maximum Power Dissipation: 100mW
• Status: Active
• Frequency-Transition: 250MHz
• Resistors (Base): 10k ohms
• Resistors (Emitter Base): 47k ohms
• Case/Package: ES6
• Supply and Demand Status: Sufficient