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Same model may have multiple batches, images only for reference.
PUMD3,165 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PUMD3,165

Part No PUMD3,165
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP 6TSSOP
Datasheet
PUMD3,165 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1090715-PUMD3,165
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PUMD3,165 CAD Model

Description

The Nexperia USA Inc. PUMD3,165 is a pre-biased dual NPN and PNP transistor that is SMD (SMT) mountable.

  • Base Resistor (R1): 10k ohms
  • Emitter Base Resistor (R2): 10k ohms
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 150mV @ 500μA, 10mA
  • Collector Cut-Off Current (Max): 1μA
  • Typical Gain (hFE) (Min): 30 @ 5mA, 5V
  • Maximum Power Dissipation: 300mW
  • Market Status: Popular
  • Supply and Demand Status: Sufficient
  • Package: Reel
  • Category: Discrete Semiconductor Products

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