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Same model may have multiple batches, images only for reference.
MRF8372R2 Real Image
Same model may have multiple batches, images only for reference.

MRF8372R2

Part No MRF8372R2
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description TRANS NPN 16V 200MA SO8
Datasheet
MRF8372R2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 16V
Frequency - Transition 870MHz
Gain 8dB to 9.5dB
Maximum Power Dissipation 2.2W
Typical Gain (hFE) (Min) 30 @ 50mA, 5V
Maximum Current Collector 200mA
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1079757-MRF8372R2
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian MRF8372R2 CAD Model

Description

The Microsemi Corporation MRF8372R2 is a high-performance NPN transistor designed for use in discrete semiconductor products.

  • Gain: 8dB to 9.5dB
  • Transition Frequency: 870MHz
  • Package: 8-SO
  • Maximum Collector Current: 200mA
  • Maximum Collector-Emitter Breakdown Voltage: 16V
  • Typical Gain: 30 @ 50mA and 5V
  • Maximum Power Dissipation: 2.2W
  • Status: Obsolete (EOL)
  • Packaging: Reel (2,500 units)

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