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Same model may have multiple batches, images only for reference.
MS1003
Same model may have multiple batches, images only for reference.

MS1003

Part No MS1003
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 18V 175MHZ M111 / RF Transistor NPN 18V 20A 136MHz ~ 175MHz 270W Surface Mount M111
Datasheet
MS1003 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Manufacturer Microsemi Corporation
Packaging Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 18V
Frequency - Transition 136MHz ~ 175MHz
Gain 6dB
Power - Max 270W
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 5A, 5V
Current - Collector (Ic) (Max) 20A
Temperature Range - Operating 200°C (TJ)
Mounting Surface Mount
Case / Package M111
Supplier Device Package M111
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number 150-MS1003,MS1003-ND
Standard Package 1
Win Source Part Number 1325035-MS1003
Ultra Librarian 3D Model Ultra Librarian MS1003 CAD Model

Description

The Microsemi Corporation NPN transistor is a high power device that is ideal for RF applications.

  • Maximum Power: 270W
  • Voltage Breakdown: 18V
  • Gain: 6dB
  • Mounting: Surface Mountable
  • Package: M111
  • DC Current Gain: 10 @ 5A and 5V
  • Transition Frequency: 136MHz to 175MHz
  • Status: Obsolete
  • ECCN: EAR99
  • REACH: Unaffected
  • HTSUS: 8541.29.0075

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