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Same model may have multiple batches, images only for reference.
MS2361
Same model may have multiple batches, images only for reference.

MS2361

Part No MS2361
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 65V 1.15GHZ M115 / RF Transistor NPN 65V 2.6A 1.025GHz ~ 1.15GHz 87.5W Chassis Mount M115
Datasheet
MS2361 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Manufacturer Microsemi Corporation
Packaging Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 65V
Frequency - Transition 1.025GHz ~ 1.15GHz
Gain 9dB
Power - Max 87.5W
Current - Collector (Ic) (Max) 2.6A
Temperature Range - Operating 200°C (TJ)
Mounting Chassis Mount
Case / Package M115
Supplier Device Package M115
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number 80-MS2361,MS2361-ND,Q11249245,150-MS2361
Standard Package 1
Win Source Part Number 1325041-MS2361
Ultra Librarian 3D Model Ultra Librarian MS2361 CAD Model

Description

Microsemi Corporation's MS2361 is an NPN type bipolar (BJT) RF transistor.

  • Maximum Power: 87.5W
  • Voltage Collector Emitter Breakdown: 65V
  • Maximum Collector Current: 2.6A
  • Gain: 9dB
  • Frequency Transition: 1.025GHz ~ 1.15GHz
  • Operating Temperature Range: 200°C (TJ)
  • Mounting: Chassis
  • Package: M115
  • Status: Obsolete
  • MSL Level: 1 (Unlimited)

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