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DMN2104L-7

Part No DMN2104L-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.3A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Input Capacitance 325pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 53 mOhm @ 4.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 108727-DMN2104L-7
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian DMN2104L-7 CAD Model

Description

Diodes Incorporated DMN2104L-7 N-Channel Enhancement Mode Field Effect Transistor (FET)

The DMN2104L-7 from Diodes Incorporated is a high-performance, N-channel enhancement mode field effect transistor (FET) designed for a wide range of applications. This MOSFET is part of the company's extensive portfolio of semiconductor solutions, engineered to provide efficient power control and switching functionality in electronic circuits.

Constructed with advanced trench technology, the DMN2104L-7 offers a low on-resistance (R<sub>DS(on)) of just 54 mΩ at V<sub>GS = 4.5V, which translates into reduced conduction losses and improved overall efficiency. This feature is particularly beneficial for power management tasks in compact and energy-sensitive systems. The device is capable of supporting a continuous drain current (I<sub>D) of up to 3.7A, making it suitable for handling moderate power loads.

With a minimal gate threshold voltage (V<sub>GS(th)) that ranges from 0.45V to 1.0V, the DMN2104L-7 ensures a low gate drive requirement, further enhancing its compatibility with low-voltage logic levels and microcontroller-based systems. This characteristic is critical for battery-operated devices where power conservation is of utmost importance.

The DMN2104L-7 is packaged in a small form-factor SOT-23, which is ideal for space-constrained applications. The SOT-23 package also provides excellent thermal performance, ensuring the device operates reliably over a wide temperature range. Furthermore, the MOSFET is RoHS compliant, adhering to environmental regulations and minimizing the ecological footprint of electronic products.

Typical applications for the DMN2104L-7 include load switch circuits, power management in portable and battery-powered devices, DC-DC converters, and other high-efficiency power designs. Its robustness and reliability also make it a solid choice for industrial and automotive applications where stringent performance standards are required.

In summary, Diodes Incorporated's DMN2104L-7 N-Channel MOSFET is a versatile and efficient solution for designers seeking to optimize their power control systems. With its low on-resistance, high current handling capability, and small package size, it stands out as an excellent choice for a multitude of electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
510+ $0.1143 $58.2930
1,235+ $0.0936 $115.5960
1,900+ $0.0912 $173.2800
2,635+ $0.0878 $231.3530
3,380+ $0.0855 $288.9900
4,550+ $0.0762 $346.7100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,900 pieces
MOQ: 510 pcs
Order Increment : 1 pcs
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