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UPD444008LE-12

Part No UPD444008LE-12
Manufacturer NEC
Catalog Electronic Wholesale
Description 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
Sample
Rohs State rohs
ECAD Module
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Manufacturer NEC
Win Source Part Number 1277796-UPD444008LE-12
Manufacturer Homepage www.nec.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian UPD444008LE-12 CAD Model

Description

The UPD444008LE-12 is a high-speed, low-power 4Mbit (512K x 8) static RAM (SRAM) manufactured by NEC. This SRAM is designed for applications requiring fast access times and low power consumption, making it suitable for various memory-intensive tasks.

Applications:

  • Cache Memory: Used in systems requiring fast data access for frequently used information.
  • Buffer Memory: Employed in devices that need to temporarily store data during processing.
  • Embedded Systems: Integrated into embedded systems where memory performance is critical.
  • Industrial Control Systems: Used in industrial automation equipment for data logging and control functions.
  • Networking Equipment: Utilized in routers, switches, and other network devices for fast packet processing.

Features:

  • High-Speed Access: Features a fast access time of 12ns, enabling rapid data retrieval.
  • Low Power Consumption: Designed for low power operation, suitable for battery-powered devices.
  • 512K x 8 Organization: Provides a memory capacity of 4Mbits organized as 512K words of 8 bits each.
  • Wide Operating Voltage: Operates over a wide voltage range, enhancing compatibility with different systems.
  • TTL Compatible Inputs/Outputs: Ensures easy integration with TTL logic circuits.

Benefits:

  • Improved System Performance: Fast access times contribute to overall system speed and efficiency.
  • Reduced Power Consumption: Low power design extends battery life in portable applications.
  • Enhanced Reliability: Robust design ensures reliable operation in demanding environments.
  • Simplified Integration: TTL compatible I/O simplifies interfacing with other components.
  • Increased Design Flexibility: Wide operating voltage range allows for use in diverse applications.

Additional Details:

The UPD444008LE-12 is typically available in a standard package, such as a DIP or SOJ. It's built using advanced CMOS technology to achieve the optimal balance between speed, power, and density. The SRAM is designed to retain data as long as power is supplied, making it suitable for applications requiring non-volatile storage during operation. Its operating temperature ranges from commercial (0°C to +70°C) to industrial (-40°C to +85°C) depending on the specific variant. Proper decoupling and careful layout techniques are essential for achieving optimal performance.

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