The UPD444016LE-12 is a high-speed, low-power 4M x 4-bit CMOS Dynamic RAM manufactured by NEC. It's designed for applications requiring fast access times and minimal power consumption.

Applications

• High-performance memory modules
• Graphics cards
• Cache memory
• Digital signal processing (DSP) systems
• High-speed data acquisition systems

Features

• Organization: 4M x 4 bits
• Access Time: 12ns
• Power Supply: 3.3V
• Refresh: Self-refresh mode available
• Package: SOJ (Small Outline J-lead)
• Operating Temperature: -40°C to +85°C
• Low power consumption
• High speed data transfer

Benefits

• High Performance: The 12ns access time enables fast data retrieval and processing.
• Low Power Consumption: Reduces overall system power requirements, contributing to energy efficiency.
• Compact Size: The SOJ package allows for high-density memory configurations.
• Reliable Operation: Designed for stable performance over a wide temperature range.
• Easy Integration: Standard interface simplifies integration into existing systems.

Additional Details

The UPD444016LE-12 utilizes advanced CMOS technology for high speed and low power operation. It supports self-refresh mode to minimize power consumption during idle periods. The SOJ package provides excellent thermal performance and is suitable for surface mount assembly. This DRAM is designed for demanding applications where speed and power efficiency are critical.