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2N1711A

Part No 2N1711A
Manufacturer New Jersey Semi-Conductor Products, Inc.
Catalog Hard To Find
Description Diode TP-39
Sample
Rohs State Need to verify
ECAD Module
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RoHS State Request Verification
Manufacturer New Jersey Semi-Conductor Products, Inc.
Win Source Part Number 1123635-2N1711A
Manufacturer Homepage www.njsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N1711A CAD Model

Description

The 2N1711A is a silicon NPN epitaxial planar transistor manufactured by New Jersey Semi-Conductor Products, Inc. Designed for high-speed switching and amplifier applications, this transistor offers excellent gain, low saturation voltage, and reliable performance. It's commonly used in various electronic circuits requiring efficient signal amplification and switching.

Applications

  • High-Speed Switching Circuits: Used in applications requiring rapid switching speeds.
  • Amplifier Stages: Employed in preamplifiers and driver stages for signal amplification.
  • Oscillator Circuits: Integrated into oscillator circuits for stable signal generation.
  • Pulse Amplifiers: Used in circuits for amplifying pulse signals.
  • Line Drivers: Functions as a line driver to transmit signals over long distances.

Features

  • NPN Epitaxial Planar Transistor: Offers excellent gain and low saturation voltage.
  • High Switching Speed: Facilitates fast and efficient switching operations.
  • Low Saturation Voltage: Minimizes power loss in switching applications.
  • High Gain: Provides efficient signal amplification.
  • Reliable Performance: Ensures stable and consistent operation.

Benefits

  • Efficient Switching: High switching speed reduces power consumption.
  • Improved Signal Amplification: High gain enhances signal quality.
  • Reduced Power Loss: Low saturation voltage minimizes energy waste.
  • Stable Performance: Ensures consistent circuit behavior.
  • Versatile Application: Suitable for a wide range of electronic circuits.

Technical Specifications

The 2N1711A typically features a collector-emitter voltage (VCEO) rating of around 60V, a collector-base voltage (VCBO) rating of approximately 80V, and an emitter-base voltage (VEBO) rating of about 5V. It also exhibits a collector current (IC) rating of approximately 500mA and a power dissipation (PD) rating of around 800mW. The operating temperature range is generally between -65°C to +200°C, making it suitable for use in various environments. The transistor is commonly available in a TO-18 package, allowing for easy integration into compact electronic devices.

The 2N1711A is a robust and reliable transistor suitable for a variety of switching and amplification applications.

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