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2N2197

Part No 2N2197
Manufacturer New Jersey Semi-Conductor Products, Inc.
Catalog Hard To Find
Description SI NPN POWER BJT , I(C) = A TO 2.4 A
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Rohs State Need to verify
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Manufacturer New Jersey Semi-Conductor Products, Inc.
Win Source Part Number 1123643-2N2197
Manufacturer Homepage www.njsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N2197 CAD Model

Description

The 2N2197 is a silicon NPN transistor produced by New Jersey Semi-Conductor Products, Inc. Primarily designed for general-purpose amplifier and switching applications, this transistor offers reliable performance and is suitable for a variety of electronic circuit designs. It is widely used in circuits requiring amplification and switching due to its robust characteristics.

Applications

  • General-Purpose Amplification: Used in audio amplifiers, signal conditioning circuits, and instrumentation amplifiers.
  • Switching Applications: Employed in switching regulators, inverters, and digital logic circuits.
  • Oscillator Circuits: Integrated into oscillators for generating timing signals.
  • Driver Stages: Used to drive higher-power transistors in various applications.
  • Analog Circuits: Suitable for use in various analog circuits requiring amplification and switching.

Features

  • NPN Silicon Transistor: Utilizes NPN silicon technology for stable and reliable performance.
  • High Collector-Emitter Voltage (VCEO): Capable of handling higher voltages, offering enhanced reliability.
  • High Current Gain (hFE): Provides good current amplification for efficient signal boosting.
  • TO-18 Package: Available in a compact TO-18 metal can package.
  • Wide Operating Temperature Range: Suitable for use in various environmental conditions.

Benefits

  • Versatile Application: Suitable for a broad range of amplification and switching tasks.
  • Reliable Performance: Ensures stable and consistent performance across different conditions.
  • High Voltage Capability: Capable of handling higher voltages compared to other similar transistors.
  • Easy Integration: Compatible with standard electronic circuit designs and components.
  • Durable Package: The TO-18 package provides good mechanical protection.

Additional Details

The 2N2197 features a collector-emitter voltage (VCEO) typically around 80V. Collector current (IC) is generally around 500mA. The power dissipation is around 800mW. The current gain (hFE) ranges from approximately 40 to 120. For detailed specifications and application notes, refer to the official datasheet provided by New Jersey Semi-Conductor Products, Inc.

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