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2PB1219AS,135

Part No 2PB1219AS,135
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 0.5A SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 600mV @ 30mA, 300mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 170 @ 150mA, 10V
Maximum Power Dissipation 200mW
Frequency - Transition 140MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1004091-2PB1219AS,135
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2PB1219AS,135 CAD Model

Description

The 2PB1219AS,135 is a PNP low VCEsat (BISS) transistor from Nexperia. It is designed for use in applications requiring efficient switching and amplification. This transistor offers a very low collector-emitter saturation voltage, which minimizes power dissipation and improves overall circuit efficiency.

Applications:

  • Load switches: Ideal for applications requiring efficient power switching.
  • Power management circuits: Used in various power management systems for control and regulation.
  • Battery-powered devices: Suitable for portable electronics due to its low power consumption.
  • DC-DC converters: Found in DC-DC converters for efficient voltage conversion.
  • Linear regulators: Employed in linear regulators for stable voltage regulation.

Features:

  • Low collector-emitter saturation voltage (VCEsat): Minimizes power loss and improves efficiency.
  • High collector current capability: Enables handling of significant current loads.
  • Fast switching speed: Suitable for high-frequency applications.
  • Small Surface Mount Device (SMD) package: Facilitates compact circuit designs.
  • High current gain (hFE): Provides good amplification performance.

Benefits:

  • Improved energy efficiency: The low VCEsat reduces power dissipation, resulting in energy savings.
  • Extended battery life: Suitable for battery-powered devices, offering longer operational times.
  • Compact design: The small SMD package allows for miniaturization of electronic devices.
  • Enhanced circuit performance: Fast switching speed enables high-frequency operation and better signal processing.
  • Reliable operation: Nexperia's quality standards ensure consistent and dependable performance.

Additional Details:

The 2PB1219AS,135 transistor is typically supplied in a SOT23 (TO-236AB) package. It is lead-free and RoHS compliant. Key electrical specifications include a collector current (IC) up to -500mA, a collector-emitter voltage (VCEO) of -40V, and a power dissipation (Ptot) of 250mW. The transistor's low saturation voltage is a significant advantage in reducing heat generation and improving overall system reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
880+ $0.0658 $57.9040
2,130+ $0.0543 $115.6590
3,335+ $0.0520 $173.4200
4,550+ $0.0508 $231.1400
5,815+ $0.0497 $289.0055
7,895+ $0.0439 $346.5905
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 77,600 pieces
MOQ: 880 pcs
Order Increment : 1 pcs
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