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Same model may have multiple batches, images only for reference.
BC859BW,135 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BC859BW,135

Part No BC859BW,135
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 0.1A SOT323
Datasheet
BC859BW,135 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 220 @ 2mA, 5V
Maximum Power Dissipation 200mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1022529-BC859BW,135
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC859BW,135 CAD Model

Description

The Nexperia BC859BW,135 is a SOT-323-3 packaged PNP transistor with a maximum collector-emitter breakdown voltage of 30V and a maximum power dissipation of 200mW.

  • Package: SOT-323-3
  • Maximum Collector-Emitter Breakdown Voltage: 30V
  • Maximum Power Dissipation: 200mW
  • Typical Gain: 220 @ 2mA, 5V
  • Maximum Collector Cut-Off Current: 15nA (ICBO)
  • Frequency Transition: 100MHz
  • Supply and Demand: Sufficient

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Quantity Unit Price Ext. Price
1,540+ $0.0376 $57.9040
3,750+ $0.0309 $115.8750
5,795+ $0.0300 $173.8500
8,000+ $0.0289 $231.2000
10,335+ $0.0280 $289.3800
13,825+ $0.0251 $347.0075
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