The BCM857DS,135 is a PNP bipolar junction transistor (BJT) array from Nexperia. This device consists of two isolated PNP transistors in a small Surface-Mounted Device (SMD) package (SOT-363). These transistors are designed for general-purpose switching and amplification applications.

Applications:

• General Purpose Amplification: Used for amplifying weak signals in various electronic circuits.
• Switching Applications: Employed as switches to control the flow of current in circuits.
• Driver Circuits: Used to drive larger loads, such as LEDs, relays, and other transistors.
• Complementary Circuits: Paired with NPN transistors to create complementary push-pull amplifiers and other circuits.
• Interface Circuits: Used to interface between different voltage levels or signal types.

Features:

• Dual PNP Transistors: Contains two isolated PNP transistors in a single package.
• Low Saturation Voltage: Provides low voltage drop when the transistor is fully turned on.
• High Current Gain (hFE): Offers high current amplification for efficient signal boosting.
• Small SMD Package: Available in a compact SOT-363 package for space-constrained applications.
• RoHS Compliant: Meets the requirements of the Restriction of Hazardous Substances directive.

Benefits:

• Space Saving: Integrates two transistors into a single package, saving valuable board space.
• Simplified Design: Reduces component count and simplifies circuit design.
• Improved Performance: Low saturation voltage and high current gain enhance circuit performance.
• Reliable Operation: Robust design ensures reliable performance in various applications.
• Environmentally Friendly: RoHS compliance ensures that the device meets environmental standards.

Additional Details:

The BCM857DS,135 is available in a SOT-363 package. It features a collector-emitter voltage (VCEO) rating of -45V and a continuous collector current (IC) rating of -100mA. The typical current gain (hFE) is 85 to 260. The operating temperature range is -65°C to +150°C.