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BSS87,115

Part No BSS87,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 400MA SOT89
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.8V @ 1mA
Max Input Capacitance 120pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 580mW (Ta), 12.5W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 400mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Dimension TO-243AA
Win Source Part Number 1024543-BSS87,115
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian BSS87,115 CAD Model

Description

The BSS87,115 is an N-channel MOSFET manufactured by Nexperia USA Inc.

  • Supply and Demand Status: sufficient
  • Commonly used in: power management circuits and industrial applications
  • Designed to: switch and amplify electronic signals
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 400mA @ 25°C
  • Gate-Source Threshold Voltage: 2.8V @ 1mA
  • Maximum Rds On: 3 Ohm @ 400mA and 10V
  • Available in: a SOT-89-3 package

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 95,580 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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