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Same model may have multiple batches, images only for reference.
BUK765R3-40E,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK765R3-40E,118

Part No BUK765R3-40E,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 75A D2PAK
Datasheet
BUK765R3-40E,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 35.5nC @ 10V
Max Input Capacitance 2772pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 137W (Tc)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025288-BUK765R3-40E,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK765R3-40E,118 CAD Model

Description

The Nexperia MOSFET with Id 438619 is a N-Channel power MOSFET that has a maximum power dissipation of 137W (Tc) and a continuous drain current of 75A (Tc) @ 25°C.

  • Manufacturer: Nexperia
  • Type: N-Channel power MOSFET
  • Maximum Power Dissipation: 137W (Tc)
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 40V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Rds On: 4.9 mOhm @ 25A, 10V
  • Package: D2PAK
  • Mounting: SMD (SMT) technology
  • Use: Suitable for use in Discrete Semiconductor Products.

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