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Same model may have multiple batches, images only for reference.
NX3008NBKMB,315 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

NX3008NBKMB,315

Part No NX3008NBKMB,315
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 530MA 3DFN
Datasheet
NX3008NBKMB,315 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 0.68nC @ 4.5V
Max Input Capacitance 50pF @ 15V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 350mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-DFN1006B (0.6x1)
Dimension 3-XFDFN
Win Source Part Number 1084184-NX3008NBKMB,315
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NX3008NBKMB,315 CAD Model

Description

The Nexperia USA Inc. NX3008NBKMB,315 is an N-Channel MOSFET with a 360mW power dissipation rating at Ta and 2.7W at Tc.

  • Power Dissipation: 360mW @ Ta, 2.7W @ Tc
  • Mounting Type: Surface-Mount
  • Package: 3-DFN1006B (0.6x1)
  • Category: Discrete Semiconductor Products
  • Temperature Range: -55℃ to 150℃ (TJ)
  • Continuous Drain Current: 530mA (Ta)
  • Rds On (Max): 1.4 Ohm @ 350mA, 4.5V
  • Gate-Source Threshold Voltage: 1.1V @ 250μA
  • Gate-Source Voltage (Max): ±8V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
310+ $0.1626 $50.4060
660+ $0.1524 $100.5840
1,020+ $0.1472 $150.1440
1,465+ $0.1369 $200.5585
1,900+ $0.1318 $250.4200
2,370+ $0.1266 $300.0420
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