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Same model may have multiple batches, images only for reference.
NX3008NBKS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

NX3008NBKS,115

Part No NX3008NBKS,115
Manufacturer Nexperia USA Inc.
Catalog TRANSISTORS
Description MOSFETs 30 V, 350 mA dual N-channel Trench MOSFET
Datasheet
NX3008NBKS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Nexperia
Technology Si
Mounting Style SMD/SMT
Package / Case TSSOP-6
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 350 mA
Rds On - Drain-Source Resistance 1.4 Ohms
Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 600 mV
Qg - Gate Charge 680 pC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 445 mW
Channel Mode Enhancement
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Brand Nexperia
Product Type MOSFETs
Standard Pack Qty 3000
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian NX3008NBKS,115 CAD Model

Description

The NX3008NBKS,115 is a 2 N-channel (dual) FET transistor manufactured by Nexperia USA Inc.

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 N-channel (dual) FET
  • Maximum Power Dissipation: 445mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 350mA @ 25°C
  • Gate-Source Threshold Voltage: 1.1V @ 250μA
  • Maximum Rds On at Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
  • Package: 6-TSSOP
  • Mounting Technology: SMD (SMT)
  • FET Feature: Logic Level Gate
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand: Sufficient

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575+ $0.1742 $100.1650
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1,280+ $0.1565 $200.3200
1,665+ $0.1506 $250.7490
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