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Same model may have multiple batches, images only for reference.
PEMB11,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PEMB11,115

Part No PEMB11,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.3W SOT666
Datasheet
PEMB11,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Frequency - Transition 180MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1087471-PEMB11,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PEMB11,115 CAD Model

Description

The Nexperia USA Inc. PEMB11,115 is a dual PNP pre-biased transistor designed for discrete semiconductor products.

  • Package: SOT-666
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain: 30 @ 5mA, 5V
  • Maximum Power Dissipation: 300mW
  • Collector Cut-off Current: 1μA
  • Frequency Transition: 180MHz

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Pricing & Ordering

Quantity Unit Price Ext. Price
510+ $0.1143 $58.2930
1,220+ $0.0947 $115.5340
1,900+ $0.0912 $173.2800
2,600+ $0.0889 $231.1400
3,380+ $0.0855 $288.9900
4,550+ $0.0762 $346.7100
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