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Same model may have multiple batches, images only for reference.
PEMD15,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PEMD15,115

Part No PEMD15,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT666
Datasheet
PEMD15,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1087476-PEMD15,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PEMD15,115 CAD Model

Description

The Nexperia USA Inc. PEMD15,115 is a SMD (SMT) mounted pre-biased (dual) transistor with a frequency transition of - and a maximum current collector of 100mA.

  • Mounting: SMD (SMT)
  • Type: Pre-biased (dual) Transistor
  • Frequency Transition: -
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 150mV @ 500μA, 10mA
  • Collector Cut-off Current (Max): 1μA
  • Typical Gain (hFE) (Min): 30 @ 10mA, 5V
  • Suitable for: Discrete semiconductor products
  • Supply and Demand: Balance
  • Package: SOT-666

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