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Same model may have multiple batches, images only for reference.
PEMD24,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PEMD24,115

Part No PEMD24,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT666
Datasheet
PEMD24,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 20mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 100k
Resistor - Emitter Base (R2) (Ohms) 100k
Typical Gain (hFE) (Min) 80 @ 5mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1087479-PEMD24,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PEMD24,115 CAD Model

Description

The PEMD24,115 is a pre-biased dual NPN and PNP transistor from Nexperia USA Inc. with a maximum current collector of 20mA and a collector-emitter breakdown voltage of 50V.

  • Maximum Current Collector: 20mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Temperature Range: -40°C to 150°C
  • Package: SOT-666
  • Maximum Power Dissipation: 300mW
  • Maximum Collector Cut-off Current: 1μA
  • Typical Gain (hFE): 80 @ 5mA, 5V
  • Packaging: Reel - TR

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235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
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