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Same model may have multiple batches, images only for reference.
PHB110NQ08T,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PHB110NQ08T,118

Part No PHB110NQ08T,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A D2PAK
Datasheet
PHB110NQ08T,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 113.1nC @ 10V
Max Input Capacitance 4860pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1087771-PHB110NQ08T,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHB110NQ08T,118 CAD Model

Description

The PHB110NQ08T,118 manufactured by Nexperia USA Inc. is an N-channel MOSFET transistor that comes in a D2PAK package.

  • Package: D2PAK
  • Application: Various electronic applications
  • Maximum Power Dissipation: 230W (Tc)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 75V

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4486 $58.7664
58+ $2.0097 $116.5626
90+ $1.9462 $175.1580
123+ $1.8838 $231.7074
159+ $1.8214 $289.6026
213+ $1.6320 $347.6160
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Availability: 1,796 pieces
In Stock: 1,118 pieces Factory Stock: 678 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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