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Same model may have multiple batches, images only for reference.
PHB191NQ06LT,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PHB191NQ06LT,118

Part No PHB191NQ06LT,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
PHB191NQ06LT,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 95.6nC @ 5V
Max Input Capacitance 7665pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1087778-PHB191NQ06LT,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHB191NQ06LT,118 CAD Model

Description

The PHB191NQ06LT,118 is an N-Channel MOSFET manufactured by Nexperia USA Inc.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A @ 25°C
  • Power Dissipation: 300W (Tc)
  • Mounting: SMD (SMT)
  • Package: D2PAK
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate-Source Voltage: ±15V
  • Application: Discrete Semiconductor Products
  • Operating Temperature: -55°C to 175°C (TJ)
  • Supply and Demand: Medium

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16+ $21.9877 $351.8032
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