The PMBT3904,235 is a high-performance NPN bipolar transistor from Nexperia USA Inc. that is designed for use in discrete semiconductor products.

• Category: Bipolar (BJT) - Single
• Maximum Power: 250 mW
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Current - Collector (Ic) (Max): 200 mA
• Transistor Type: NPN
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Frequency-Transition: 300MHz
• Package/Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB
• Operating Temperature Range: 150°C (TJ)