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Same model may have multiple batches, images only for reference.
PMDT290UCE,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMDT290UCE,115

Part No PMDT290UCE,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SOT666
Datasheet
PMDT290UCE,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 800mA, 550mA
Maximum Rds On at Id,Vgs 380 mOhm @ 500mA, 4.5V
Gate-Source Threshold Voltage 0.95V @ 250μA
Max Gate Charge 0.68nC @ 4.5V
Max Input Capacitance 83pF @ 10V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1089517-PMDT290UCE,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PMDT290UCE,115 CAD Model

Description

The Nexperia USA Inc. PMDT290UCE,115 is a reel SMD (SMT) mounted N and P-Channel FET that has a drain-source breakdown voltage of 20V and a continuous drain current of 800mA @ 25°C.

  • Manufacturer: Nexperia USA Inc.
  • Product Name: PMDT290UCE,115
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 800mA @ 25°C
  • FET Feature: Logic Level Gate
  • Maximum Power Dissipation: 500mW
  • Gate-Source Threshold Voltage: 0.95V @ 250μA
  • Maximum Gate Charge: 0.68nC @ 4.5V
  • Maximum Rds On @ Id, Vgs: 380 mOhm @ 500mA, 4.5V

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