The PMN27XPEAX is a P-channel enhancement mode MOSFET from Nexperia. It's designed for load switch, high-speed switching, and level shifting applications, providing efficient and reliable performance in a small DFN1010D-3 (SOT1215) leadless package.

Applications:

• Load Switching
• High-Speed Switching
• Level Shifting
• Portable Devices
• Battery Management Systems

Features:

• Low On-Resistance (RDS(on))
• Small DFN1010D-3 (SOT1215) Package
• Logic Level Compatible
• Low Threshold Voltage
• AEC-Q101 Qualified

Benefits:

• Improved Power Efficiency due to low RDS(on)
• Space-Saving Design for Compact Applications
• Easy to Drive with Logic Level Signals
• Robust Performance in Automotive Applications

Detailed Specs:

The PMN27XPEAX features a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -2.7A. The typical gate threshold voltage (VGS(th)) is -0.7V. It has a low on-resistance (RDS(on)) of 75 mOhms at VGS = -4.5V and 115 mOhms at VGS = -2.5V. The total gate charge (Qg) is typically 5.5 nC. The device is supplied in a DFN1010D-3 (SOT1215) package, offering excellent thermal performance in a small footprint. This MOSFET is also AEC-Q101 qualified, ensuring high reliability for automotive applications. The ESD protection is greater than 2 kV HBM. Its low threshold voltage allows for easy driving from logic level signals, simplifying circuit design. The PMN27XPEAX is also RoHS compliant.

This P-channel MOSFET is especially useful in load switching applications where a small size and low on-resistance are critical. Its logic-level compatibility allows direct connection to microcontrollers and other digital devices. The AEC-Q101 qualification makes it suitable for automotive applications where reliability is paramount.