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PMN30XPEAX

Part No PMN30XPEAX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL SIGNAL MOSFET FOR AUTOMOTI  /  P-Channel 20 V 5.4A (Ta) 660mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V
Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 8V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1025 pF @ 10 V
Power Dissipation (Max) 660mW (Ta), 7.5W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 6-TSOP
Package / Case SC-74, SOT-457
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1727-PMN30XPEAXDKR,1727-PMN30XPEAXCT,934069661115,1727-PMN30XPEAXTR
Standard Package 3,000
Win Source Part Number 969606-PMN30XPEAX
Ultra Librarian 3D Model Ultra Librarian PMN30XPEAX CAD Model

Description

The 969606-PMN30XPEAX is a P-Channel MOSFET transistor designed for use in automotive applications.

  • Type: TrenchMOS™
  • Drain to Source Voltage (Vdss): 20 V
  • Continuous Current: 5.4A @ 25°C
  • Maximum On-Resistance (Rds On): 33mOhm @ 5.4A and 8V gate to source voltage (Vgs)
  • Gate Charge (Qg): 16 nC @ 4.5 Vgs
  • Input Capacitance (Ciss): 1025 pF @ 10 Vds
  • Maximum Gate to Source Voltage (Vgs): ±12V
  • Package: SC-74, SOT-457
  • Supplied in: a 6-TSOP package
  • Operating Temperature Range: -55°C to 175°C
  • Power Dissipation (Max): 660mW (Ta), 7.5W (Tc)
  • Drive Voltage: 2.5V, 8V (Max Rds On, Min Rds On)

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